Analysis of Tunnelling Rate Effect on Single Electron Transistor

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Modeling and Simulation of a Molecular Single-Electron Transistor

In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...

متن کامل

The Analysis of Coulomb Blockade in Fullerene Single Electron Transistor at Room Temperature

The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such...

متن کامل

Single-electron transistor backaction on the single-electron box

B. A. Turek,1 K. W. Lehnert,1 A. Clerk,1 D. Gunnarsson,2 K. Bladh,2 P. Delsing,2 and R. J. Schoelkopf1 1Department of Applied Physics and Department of Physics, Yale University, New Haven, Connecticut 06511, USA 2Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Goteborg University, SE-412 96 Goteborg, Sweden Received 2...

متن کامل

In-plane tunnelling field-effect transistor integrated on Silicon

Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numero...

متن کامل

Inductive single-electron transistor.

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity 1.4 x 10(-4) e/square root Hz, limited by a preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential. Owing to reactive readout, our setup has more than 2 ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Electrical Engineering and Technology

سال: 2014

ISSN: 1975-0102

DOI: 10.5370/jeet.2014.9.5.1670